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    Please use this identifier to cite or link to this item: http://ir.nfu.edu.tw:80/handle/392390000/5074


    題名: Effect of tin-doped indium oxide film thickness on the diffusion barrier between silicon and copper
    作者: Liu, W. L.;Chen, W. J.;Tsai, T. K.;Hsieh, S. H.;Liu, C. M.
    日期: 2006
    上傳時間: 2015-11-09T09:49:00Z
    URI: http://ir.nfu.edu.tw:80/handle/392390000/5074
    Appears in Collections:[材料科學與工程系含(材料科學與綠色能源工程研究所)] 期刊論文

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